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Driven by the electrification of automobiles, power electronic devices can be described as rising both in quantity and price. The development of power electronic devices has gone through the first stage with thyristor as the core and the second stage with MOSFET and IGBT as the representative. Now it is entering a new development stage with wide band gap semiconductor devices as the core. The new generation of power electronic devices is also promoting the development of MOSFET and IGBT, which also drives the growing popularity of wide band gap semiconductors such as SiC and GaN. Electric vehicles have become the core application scenario of SiC. Therefore, we will focus on electric vehicles and discuss the application trend of SiC in electric vehicles with you.

On February 15, EST, Texas Instruments announced that it would build a second 300mm wafer factory in Lehi, Utah, USA.

Innovation is the key factor for the success of enterprises, which has undoubtedly become a consensus. However, the pace of innovation in different industries and enterprises can still widen the gap in the morning. Apart from the different pace of development among industries, are there any other reasons?

On the 8th of the International Electronic Business News, Infineon Technology Co., Ltd. announced that it had reached a final agreement with Micross Components ("Micross") to sell Infineon's HiRel DC-DC converter business, including hybrid and customized on-board power products, to Micross.